CN

Stock Code:800328

QINGDAO JIAEN SEMICONDUCTOR CO., LTD

  • Precautions for the use of IGBT modules
    2023.07.05

    Precautions for the use of IGBT modules

    In the case of using IGBT modules, it is necessary to carefully consider which voltage and current specification IGBT modules to choose.

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  • IGBT Quality Measurement Method- Quickly Teach You To Judge IGBT Quality
    2023.06.28

    IGBT Quality Measurement Method- Quickly Teach You To Judge IGBT Quality

    1. HOW TO MEASURE THE QUALITY OF IGBT (1). First Determine The Polarity Before measuring whether the IGBT is good or bad, the polarity of the IGBT must be determined first.

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  • Invitation to Electronica(Shanghai) China 2023
    2023.06.20

    Invitation to Electronica(Shanghai) China 2023

    We hereby sincerely invite you and your company representatives to join Electronica China 2023 to visit our booth (7.2H E206) at NECC (Shanghai) from July 11 to 13, 2023.

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  • Clamp Circuit In IGBT Drive Circuit
    2023.06.13

    Clamp Circuit In IGBT Drive Circuit

    Clamping circuits are sometimes used in IGBT drive circuits. The main purpose is to protect IGBT devices and prevent operating parameters from exceeding the limit parameters of the collector or gate. Today we summarize the precautions for the design and use of Vce and Vge clamping circuits.

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  • Learn About IGBT Modules
    2023.06.09

    Learn About IGBT Modules

    IGBT (Insulated Gate Bipolar Transistor), an insulated gate bipolar transistor, is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), with both The advantages of both high input impedance of MOSFET and low turn-on voltage drop of GTR.

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  • Why are SiC devices not yet replacing IGBTs?
    2023.06.06

    Why are SiC devices not yet replacing IGBTs?

    he production process and technology of silicon carbide (SiC) devices have become increasingly mature, and the biggest obstacle to market promotion is cost. This includes the cost of R&D and production costs as well as the drive capacitor resistance in the entire circuit after the SiC device is replaced by the IGBT. Unless the manufacturer pushes, it does reduce costs and improve performance. After all, adopting new things will cost a lot. Affected by manufacturing costs and product yield, the main reason for hindering the large-scale entry of SiC products into the market is that it is expensive, generally about 10 times that of similar Si products. Although in the future, with the improvement of technology and cost, the replacement of IGBT by silicon carbide (SiC) device is inevitable silicon carbide (SiC) device, and its performance may be very powerful, but it can become a big trend not only in performance but also in cost and reliability. Multiple guarantees on reliability.

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