Thermal cycling changes within all power modules cause module aging. The reason is that the thermal expansion of the materials used is different, so the thermal stress between them can cause connection fatigue or even breakage. The service life of the module and the number of cycles it can withstand temperature changes will decrease as the amplitude T of the temperature change increases. In the frequency range from a few Hz to a few hundred Hz, the change in power consumption is not caused by the transient thermal impedance of the chip. It only causes a small temperature fluctuation of the module chip. Although at this frequency, T is not so small and has low energy, it will be absorbed by the elastic filler and has little impact on the aging of the module. It has no impact on the service life. When working at a few hertz, and the load changes in the range of a few seconds and generates high temperatures, such as traction drives, elevators and intermittent pulse applications, the temperature change load effect will occur inside the module, which will affect the connection belt inside the module.
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The Significance Of IGBT Double Pulse Test Compare the parameters and performance of different IGBTs; Obtain the parameters of the IGBT turn-on and turn-off process;
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IGBT - Desaturation Problem This is the output characteristic curve of a certain product. You can see that the IGBT working area is divided into three parts:
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The working principle of the IGBT half-bridge inverter circuit and the voltage and current waveforms when IGBT1 is turned on and off are shown in Figure 1. Lσ represents the sum of all stray inductances (capacitors, busbars, IGBTs) in the entire commutation circuit (within the stripe area) module).
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Using IGBTs in parallel to form switching devices can enable the entire system to obtain a higher rated current. However, some important issues must be considered when designing a parallel system, such as module characteristics, drive circuits and circuit layout.
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In this case, the avalanche event produces a drain current that is larger where the electric field is stronger. The latch-up effect is caused by the parasitic NPN Bipolar Junction Transistor (BJT) in the power MOSFET. If the device is constructed such that the electric field near the parasitic BJT is high, a large amount of current will flow through its base resistor, creating a voltage between the base and emitter. If this voltage reaches a certain threshold, the bipolar transistor turns on and most of the avalanche current flows through it, with potentially damaging effects since there is no way to control the current.
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