When the frequency converter tractions the motor, the power factor of the motor is positive, the motor absorbs active energy, and the active energy is sent to the motor, and the power factor of the motor is positive.
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This section describes the electrical characteristic parameters related to the mechanical structure of the IGBT module, including insulation withstand voltage, main terminal resistance, stray inductance, and DC voltage capability.
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The power dissipation and rated current of the IGBT module are meaningless regardless of the temperature and thermal resistance of the IGBT module. Therefore, in order to compare the performance of different power devices, it is necessary to analyze their thermal characteristics. The heat generated by the power loss of the IGBT module will increase the junction temperature inside the device, thereby reducing the performance of the device and IGBT converter and shortening its life. It is very important to dissipate the heat generated from the chip junction to reduce the junction temperature. The transient thermal impedance Zthjc(t) describes the heat dissipation ability of the device. The thermal resistance Rth is defined as the value of the junction temperature rise relative to the temperature of the external specified point caused by the unit power consumption when the silicon chip consumes power and reaches thermal balance. It is a key factor to measure the heat dissipation capability of the IGBT.
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When the IGBT is turned off, the operating range of the VCE-IC that works safely is called the reverse bias safe operating area (RBSOA: Reverse Bias SafeOperation Area), also known as the switch safe operating area, which refers to the maximum allowable instantaneous voltage during repeated shutdown operation current.
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In terms of structure, UPS power supply can be mainly composed of several main parts such as rectifier, inverter, bypass switch, battery, etc. The working principle of each part is different. This article will analyze the composition of UPS power supply and each component in detail Analysis of the principle function.
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VCES: Collector-Emitter Voltage Of The IGBT The highest allowable off-state collector-emitter voltage in the gate-emitter short circuit condition within the usable junction temperature range. In the manual, VCES is specified at a junction temperature of 25°C, and VCES will decrease as the junction temperature decreases. The relationship between the reduction range and the temperature change can be approximately described by the following formula: .
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