Stock Code:800328


  • Why are SiC devices not yet replacing IGBTs?

    Why are SiC devices not yet replacing IGBTs?

    he production process and technology of silicon carbide (SiC) devices have become increasingly mature, and the biggest obstacle to market promotion is cost. This includes the cost of R&D and production costs as well as the drive capacitor resistance in the entire circuit after the SiC device is replaced by the IGBT. Unless the manufacturer pushes, it does reduce costs and improve performance. After all, adopting new things will cost a lot. Affected by manufacturing costs and product yield, the main reason for hindering the large-scale entry of SiC products into the market is that it is expensive, generally about 10 times that of similar Si products. Although in the future, with the improvement of technology and cost, the replacement of IGBT by silicon carbide (SiC) device is inevitable silicon carbide (SiC) device, and its performance may be very powerful, but it can become a big trend not only in performance but also in cost and reliability. Multiple guarantees on reliability.

  • Don't you understand the triode push-pull circuit?

    Don't you understand the triode push-pull circuit?

    A push-pull circuit is also called a totem pole circuit. I don't understand how the name of the totem pole came from, but "push-pull" is more vivid.

  • IGBT Static Parameter Test

    IGBT Static Parameter Test

    IGBT (Insulated Gate Bipolar Transistor) is a new type of composite device that combines the advantages of power field effect transistors and power transistors. It has both the high-speed switching and voltage drive characteristics of MOSFETs and the low saturation voltage of bipolar transistors. It has the advantages of high input impedance, fast working speed, good thermal stability and simple driving circuit, and has the advantages of low on-state voltage, high withstand voltage and large current.

  • What Do You Know About Triode

    What Do You Know About Triode

    What Do You Know About Triode This time we expand the scope to NPN and PNP tubes, and give you some examples. The examples range from easy to difficult. If you can answer all of them, then you have a thorough understanding of triodes.

  • The most typical application of triode-Mosfet drive circuit

    The most typical application of triode-Mosfet drive circuit

    To be honest, most of these circuits appear in interviews or textbooks to examine some people's understanding of triodes. But in the actual circuit, it is rare to see the triode working in the amplification area. Speaking of this, I also give reassurance to the college students in school. Every day in the textbook, "the collector is positively biased", and the "common collector and co-ejector" is very positive and that polar is reversed. To be honest, it is not very useful in work. If you do all these questions well, you will not be able to design an actual circuit; the engineer who designs the actual circuit may not necessarily be able to solve the problem.

  • Why Do Power Semiconductors Explode?

    Why Do Power Semiconductors Explode?

    Why Do Power Semiconductors Explode? The explosion of power semiconductor devices is generally in a short circuit state. The chip bears high voltage and high current at the same time, and the transient power loss is extremely large. When the short circuit state is too long (the driver is not well protected), the heat generated will break the chip (non-uniform internal stress) and the surrounding area in a short time. The material (surface aluminum layer, aluminum wire) vaporizes to produce an explosion.


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