CN

Stock Code:800328

QINGDAO JIAEN SEMICONDUCTOR CO., LTD

  • What are the substrate requirements for heteroepitaxial growth?
    2024.04.17

    What are the substrate requirements for heteroepitaxial growth?

    Heteroepitaxy is an advanced crystal growth technology. It refers to the process of growing a thin film or epitaxial layer with a different crystal structure or chemical composition from the substrate material on a specific substrate material, that is: on a specific substrate material. A substrate of material grows on another material.

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  • IGBT module peak voltage absorption circuit
    2024.04.09

    IGBT module peak voltage absorption circuit

    When the IGBT is turned off, a surge voltage will occur between the collector and the emitter due to the energy stored in the inductor. The snubber circuit suppresses overvoltage applied to the IGBT and increases turn-off losses. This is because the snubber capacitor can share part of the energy during shutdown. Be sure to handle the energy absorbed by the capacitor properly.

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  • The concept of IGBT driver isolation
    2024.03.27

    The concept of IGBT driver isolation

    What is quarantine? Galvanic isolation: Charge cannot move from one circuit to another, and signals from both parties exchange information through other means.

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  • THE PACKAGING AND TESTING INDUSTRY RESHUFFLE IS ACCELERATING, AND MAINLAND MANUFACTURERS ARE FACING NEW OPPORTUNITIES
    2024.03.21

    THE PACKAGING AND TESTING INDUSTRY RESHUFFLE IS ACCELERATING, AND MAINLAND MANUFACTURERS ARE FACING NEW OPPORTUNITIES

    Recently, the packaging and testing industry in mainland China has been undergoing a lot of changes.

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  • Analysis of IGBT switching process and driving considerations
    2024.03.15

    Analysis of IGBT switching process and driving considerations

    The circuit of IGBT under diode clamped inductive load conditions is shown in Figure 1. This circuit is a commonly used IGBT circuit and can be used as a test circuit for IGBT switching characteristics to evaluate the on and off behavior of IGBT. Figure 2 shows the actual IGBT switch waveform obtained by comprehensively considering the recovery characteristics of diodes and stray inductance (Ls), which can be used as a reference for designing IGBT drive circuits. Firstly, we set the IGBT to operate under continuous steady-state current conditions, flowing through an inductive load and then through an ideal freewheeling diode parallel to the inductive load.

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  • GLOBAL POWER SEMICONDUCTOR MARKET SIZE IS ESTIMATED TO REACH USD 55 BILLION BY 2030, GROWING AT A CAGR OF 3.3%: STRAITS RESEARCH
    2024.03.13

    GLOBAL POWER SEMICONDUCTOR MARKET SIZE IS ESTIMATED TO REACH USD 55 BILLION BY 2030, GROWING AT A CAGR OF 3.3%: STRAITS RESEARCH

    The Asia-Pacific region commands the largest market share in power semiconductors, with an estimated CAGR of 3.6%. China, Japan, Taiwan, and South Korea collectively contribute around 65% of the global discrete semiconductor market, while countries like Vietnam, Thailand, Malaysia, and Singapore also play significant roles. North America follows closely, expected to reach USD 8.5 billion by 2030 with a CAGR of 2.6%. The region boasts early adoption of new semiconductor technologies, particularly in automotive, IT, telecommunications, military, aerospace, and consumer electronics.

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