Overcurrent or short-circuit faults will inevitably occur during the application of IGBTs. When such faults occur, the current of the device will be very large, which will easily increase the junction temperature of the IGBT chip and cause the device to burn out. In order to find out the cause of the fault and find a solution, we generally analyze the fault path when the IGBT is over-current or short-circuited. Let's take the application of two-level inverters as an example to analyze several types of short-circuit faults that are prone to occur in IGBTs, so as to deepen everyone's understanding of short-circuit faults.
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China's IGBT power device industry is an emerging high-tech industry, and has now developed into an industry with important economic significance. IGBT power devices refer to semiconductor components composed of transistors and emitters, used to control current and voltage in electronic circuits, and are more advanced power semiconductor components in the world today
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IGBT devices are collectively referred to as igbt, because all electronic components can be called devices.
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Fast recovery diodes, namely power semiconductor devices, are the bridge between weak current control and strong current operation, between information technology and advanced manufacturing, and are an important foundation of the national economy. With the increasingly urgent demand for energy saving and emission reduction in countries all over the world, power semiconductor devices have moved from traditional industrial control and 4C (communication, computer, consumer electronics and automobile) to new energy, rail transit, smart grid, frequency conversion Home appliances and many other industries.
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First of all, it can be distinguished from the appearance: the fast recovery diode has only two legs, and the triode has three legs.
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Due to the unbalanced output voltage of the frequency converter (VFD), the motor shakes and the speed is unstable. In general, it is difficult to determine which drive is at fault without experience. At this time, the 2hz of the VFD can be started, and the voltage values of p-u, p-v, p-w and u-n, v-n and w-n can be measured respectively with the DC voltage range of the multimeter. These six voltages will be different at this time, and the higher voltage will be different. The following is a simple measurement method for IGBT modules.
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