Today, the editor mainly analyzes and expounds the driving application circuit of IGBT. Taking the hybrid integrated circuit EXB841 as an example, it is a typical driving circuit, which can not only drive up to 400A 600V IGBT and up to 300A 1200V IGBT, but also has more complete module functions. , with single power supply, positive and negative bias, overcurrent detection, protection, soft shutdown and other main features.
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In the induction cooker, the IGBT is a component with a large share of damage. If the cause of the failure is not identified, the test machine will cause the IGBT to be damaged again.
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IGBTs (Insulated Gate Bipolar Transistors) are ideal for applications with bus voltages in the hundreds to thousands of volts. As minority carrier devices, IGBTs have better turn-on characteristics than MOSFETs in this voltage range, while having a gate structure very similar to MOSFETs for easy control. In addition, since there is no need for an integrated reverse diode, this gives manufacturers the flexibility to choose a fast "composite package" diode optimized for the application, as opposed to intrinsic MOSFET diodes, which have reverse recovery charge Qrr and reverse recovery The time trr increases as the rated voltage increases.
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There are roughly ten semiconductor equipments required to make a silicon wafer, they are single crystal furnace, vapor phase epitaxy furnace, oxidation furnace, magnetron sputtering table, chemical mechanical polishing machine, lithography machine, ion implanter, wire bond machine, wafer dicing machine, wafer thinning machine.
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The photovoltaic inverter is a very important device in the photovoltaic system. Its main function is to convert the direct current from photovoltaic modules into alternating current. In addition, the inverter is also responsible for detecting the operating status of components, power grids, and cables, and communicating with the outside world. , system security housekeeper and other important functions. It takes more than two years to produce a brand-new inverter, and a lot of manpower and material resources need to be invested in R&D and testing in the early stage.
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The switching process of the IGBT is mainly controlled by the gate voltage VGE. Since there is a parasitic capacitance between the gate and the emitter, the turn-on and turn-off of the IGBT is equivalent to charging and discharging the CGE. It is assumed that the initial state of the IGBT is an off state, that is, VGE is a negative pressure VGC-, and the output of the latter stage is a resistive inductive load with a freewheeling diode. So how much do you know about the definition of IGBT switching time? details as follows.
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