IGBT Static Parameter Test
IGBT (Insulated Gate Bipolar Transistor) is a new type of composite device that combines the advantages of power field effect transistors and power transistors. It has both the high-speed switching and voltage drive characteristics of MOSFETs and the low saturation voltage of bipolar transistors. It has the advantages of high input impedance, fast working speed, good thermal stability and simple driving circuit, and has the advantages of low on-state voltage, high withstand voltage and large current.
In recent years, IGBT has become a particularly eye-catching power electronic device in the field of power electronics, and has been more and more widely used. Then the IGBT test becomes particularly important. The IGBT test includes static parameter test, dynamic parameter test, short circuit test, thermal resistance test, etc. The most basic test in these tests is the static parameter test. Only the static parameter test of the IGBT can be guaranteed. Only when there is no problem, the dynamic parameters (switching time, switching loss, reverse recovery of the freewheeling diode), short circuit, and thermal resistance are tested. Here we first introduce the static parameter test of the IGBT. For parameter testing, we must first understand what are the static parameters of the IGBT?
IGBT static parameters include BVCES, ICES, IGES, VGE(TH), VCE(SAT), VF, etc.
1. BVCES: When the gate G and the emitter E are short-circuited, and a certain IC is added, the breakdown voltage between the collector C and the emitter E of the IGBT.
2. ICES: When the gate G and the emitter E are short-circuited, and a certain VCE is applied, the leakage current between the collector C and the emitter E of the IGBT.
3. IGES: When the collector C and the emitter E are short-circuited, and a certain VGE is applied, the leakage current between the gate G and the emitter E of the IGBT.
4. VGE(TH): Under a certain IC, the turn-on voltage of the IGBT.
5. VCE(SAT): Add a certain VGE (greater than VGE(TH)) between the gate G and the emitter, and under a certain IC, the saturation voltage drop between the collector C and the emitter E of the IGBT.
6. VF: Under a certain IE, the voltage drop of the freewheeling diode.
To judge the quality of an IGBT device, it is necessary to test the above parameters, and the test results must be compared with the range in the column of the electrical characteristics of the IGBT specification issued by the IGBT manufacturer. pass, otherwise fail.