Rated gate drive voltage: When a voltage exceeding this range is applied to the gate drive voltage within the ±20V range, the oxide film (SiO2) between the gate and the emitter may suffer insulation damage or cause a decrease in reliability.
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With the rise of emerging applications such as wind power generation, smart grid construction, electric vehicles, and high-voltage inverters, high-power IGBT modules are increasingly used. Correspondingly, the importance of IGBT reliability in high-power power supply design is increasing day by day. . System reliability has become one of the most important design indicators. The reliability of high-power switching devices is a top priority.
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Happy new year !!!!!!!!Many thanks for your continuous support and understanding throughout the year.
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IGBT junction temperature is one of the most important parameters of power electronic devices. It is very difficult to measure this temperature during operation of the device. One method is to approximately estimate the temperature of the chip in its stable operating state by using the NTC (thermistor) inside the IGBT module. This method is not suitable for measuring rapidly changing IGBT temperatures.
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The most common form of IGBT is actually a module, not a single tube.
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In the file data sheet, the limit values are given for each component of the IGBT module (IGBT, diode, housing, temperature sensor, etc.). All IGBT and diode limit values are given in a circuit (branch), regardless of how many transistor modules the circuit (branch) contains and whether the number of IGBT and diode chips is connected in parallel.
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