All encounters are reunions after a long absence. From July 11th to 13th, 2023, the three-day Electronica China ( Shanghai) 2023 Electronics Fair has come to a successful conclusion. I would like to thank all old and new friends for their visit and guidance, and also thank every customer for their trust and support in us. Although the exhibition is only for 3 days, our passion will not fade away. All staff of Jiaen Semiconductor serve everyone with sincerity and enthusiasm, and look forward to meeting you again!
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In the case of using IGBT modules, it is necessary to carefully consider which voltage and current specification IGBT modules to choose.
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1. HOW TO MEASURE THE QUALITY OF IGBT (1). First Determine The Polarity Before measuring whether the IGBT is good or bad, the polarity of the IGBT must be determined first.
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We hereby sincerely invite you and your company representatives to join Electronica China 2023 to visit our booth (7.2H E206) at NECC (Shanghai) from July 11 to 13, 2023.
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Clamping circuits are sometimes used in IGBT drive circuits. The main purpose is to protect IGBT devices and prevent operating parameters from exceeding the limit parameters of the collector or gate. Today we summarize the precautions for the design and use of Vce and Vge clamping circuits.
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IGBT (Insulated Gate Bipolar Transistor), an insulated gate bipolar transistor, is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), with both The advantages of both high input impedance of MOSFET and low turn-on voltage drop of GTR.
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