Factors affecting static current sharing 1. The resistance component of the DC bus side connection point of the parallel IGBT needs to be as symmetrical as possible; 2. There is a difference between the Vce(sat) of the IGBT chip and the VF of the diode chip, so try to use products from the same batch. 3. The temperature difference between the IGBT modules needs to be considered when designing the mechanical structure and air duct; 4. Differences in magnetic fields where IGBT modules are located; 5. The difference in gate voltage Vge.
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Heteroepitaxy is an advanced crystal growth technology. It refers to the process of growing a thin film or epitaxial layer with a different crystal structure or chemical composition from the substrate material on a specific substrate material, that is: on a specific substrate material. A substrate of material grows on another material.
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When the IGBT is turned off, a surge voltage will occur between the collector and the emitter due to the energy stored in the inductor. The snubber circuit suppresses overvoltage applied to the IGBT and increases turn-off losses. This is because the snubber capacitor can share part of the energy during shutdown. Be sure to handle the energy absorbed by the capacitor properly.
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What is quarantine? Galvanic isolation: Charge cannot move from one circuit to another, and signals from both parties exchange information through other means.
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Recently, the packaging and testing industry in mainland China has been undergoing a lot of changes.
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The circuit of IGBT under diode clamped inductive load conditions is shown in Figure 1. This circuit is a commonly used IGBT circuit and can be used as a test circuit for IGBT switching characteristics to evaluate the on and off behavior of IGBT. Figure 2 shows the actual IGBT switch waveform obtained by comprehensively considering the recovery characteristics of diodes and stray inductance (Ls), which can be used as a reference for designing IGBT drive circuits. Firstly, we set the IGBT to operate under continuous steady-state current conditions, flowing through an inductive load and then through an ideal freewheeling diode parallel to the inductive load.
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