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QINGDAO JIAEN SEMICONDUCTOR CO., LTD

  • IGBT parallel connection technology-classification of parallel connection methods
    2024.05.17

    IGBT parallel connection technology-classification of parallel connection methods

    IGBT parallel connection can be divided into two categories: "hard parallel connection" and "bridge arm parallel connection". (1) "Hard parallel connection" means that the emitter and collector of IGBT are directly connected together, as shown in the lower left figure; (2) "Bridge arm parallel connection" means that the AC output terminals of the IGBT bridge arms are connected together through a current-sharing reactance (the inductance has a certain value), as shown in the lower right figure;

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  • IGBT parallel technology-IGBT current sharing problem
    2024.05.11

    IGBT parallel technology-IGBT current sharing problem

    Factors affecting static current sharing 1. The resistance component of the DC bus side connection point of the parallel IGBT needs to be as symmetrical as possible; 2. There is a difference between the Vce(sat) of the IGBT chip and the VF of the diode chip, so try to use products from the same batch. 3. The temperature difference between the IGBT modules needs to be considered when designing the mechanical structure and air duct; 4. Differences in magnetic fields where IGBT modules are located; 5. The difference in gate voltage Vge.

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  • What are the substrate requirements for heteroepitaxial growth?
    2024.04.17

    What are the substrate requirements for heteroepitaxial growth?

    Heteroepitaxy is an advanced crystal growth technology. It refers to the process of growing a thin film or epitaxial layer with a different crystal structure or chemical composition from the substrate material on a specific substrate material, that is: on a specific substrate material. A substrate of material grows on another material.

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  • IGBT module peak voltage absorption circuit
    2024.04.09

    IGBT module peak voltage absorption circuit

    When the IGBT is turned off, a surge voltage will occur between the collector and the emitter due to the energy stored in the inductor. The snubber circuit suppresses overvoltage applied to the IGBT and increases turn-off losses. This is because the snubber capacitor can share part of the energy during shutdown. Be sure to handle the energy absorbed by the capacitor properly.

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  • The concept of IGBT driver isolation
    2024.03.27

    The concept of IGBT driver isolation

    What is quarantine? Galvanic isolation: Charge cannot move from one circuit to another, and signals from both parties exchange information through other means.

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