Generally, semiconductor devices with rated current exceeding 1 ampere are called power semiconductors. They block voltages ranging from a few volts all the way up to tens of thousands of volts. Among the many power semiconductor devices, the power diode is a relatively simple device, but it is also a common basic device that is most widely used in power circuits. It is not only used in simple rectifier circuits, but also often used as freewheeling diodes (FWD for short). In simple single-phase half-bridge inverter circuits, it is matched with controllable switching devices and used in anti-parallel to continue to maintain inductance. current on the load, preventing voltage spikes due to sudden drops in current. The use of this kind of FWD exists in many applications such as switching power supplies, variable frequency power supplies, uninterruptible power supplies, and variable frequency motor drives.
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IGBT single tube: a variety of advanced IGBT technology platforms: plane non-punch-through, trench non-punch-through, plane field cut-off, trench field cut-off; providing users with flexible options in terms of economy and performance.
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The role of the power MOS in the electric vehicle controller is very important. Simply speaking, the output current of the MOS is used to drive the motor. The larger the current output (in order to prevent overcurrent from burning out the MOS, the controller has a current-limiting protection), the stronger the motor torque and the stronger the acceleration (the torque before the motor's magnetic saturation is proportional to the phase current).
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Functional ceramics in IGBT is equivalent to the application on electronic circuit substrates. As the material of functional ceramic substrates, it has excellent insulation. Next, I will introduce the application of functional ceramics in the field of IGBTs.
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The series resonance intermediate frequency induction furnace adopts IGBT intermediate frequency power supply. IGBT intermediate frequency power supply is a new type of IGBT inverter module, which is mainly used to smelt carbon steel, alloy steel, cast steel and non-ferrous metals. The IGBT intermediate frequency power supply has the characteristics of fast heating speed, energy saving and environmental protection.
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IGBT is an insulated gate bipolar transistor. It is a composite fully controlled voltage-driven power semiconductor device composed of a bipolar transistor (BJT) and an insulated gate field effect transistor (MOSFET). It has both the high input impedance of MOSFET and GTR. two advantages of low turn-on voltage drop. In electronic circuits, IGBT is equivalent to a switch in electronic circuits, and is a semiconductor device driven by high power, high current and high withstand voltage.
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