SC 2 short-circuit fault waveform is shown in Fig.7. Once a short circuit occurs, the IGBT current rises rapidly, and the di/dt rise rate is determined by the bus voltage and the parasitic inductance of the loop. In the first stage, the IGBT begins to appear in an undersaturated state, and the IGBT collector voltage rises slightly during this process. However, due to the large Miller capacitance in this stage, due to the effect of dv/dt, some current will flow into the gate, resulting in a decrease in the gate voltage Vge. The increase of Vge will further cause the collector current to rise.
VIEW MORE+
4. Short circuit fault SC 1 When the IGBT is turned on, it enters the short-circuit state, which can be analyzed with the double-pulse test circuit shown in Figure 3. By changing the size of the short-circuit inductance Lsc (within tens of nH), the turn-on and short-circuit behavior characteristics of the down-side IGBT can be analyzed. SC 1 is also the most common short-circuit fault of IGBT. According to the length of the desaturation time (depending on the short-circuit circuit noise), it can be further divided into a type I short circuit and a type II short circuit.
VIEW MORE+
IGBT is one of the core components in the inverter, and its function is to convert direct current into alternating current. Therefore, the working reliability of the IGBT directly determines the performance stability of the inverter. Once there is a problem with the IGBT, it will cause the failure of the inverter, and even cause irreversible damage to the entire system. So how to detect whether the IGBT is good or bad?
VIEW MORE+
Overcurrent or short-circuit faults will inevitably occur during the application of IGBTs. When such faults occur, the current of the device will be very large, which will easily increase the junction temperature of the IGBT chip and cause the device to burn out. In order to find out the cause of the fault and find a solution, we generally analyze the fault path when the IGBT is over-current or short-circuited. Let's take the application of two-level inverters as an example to analyze several types of short-circuit faults that are prone to occur in IGBTs, so as to deepen everyone's understanding of short-circuit faults.
VIEW MORE+
China's IGBT power device industry is an emerging high-tech industry, and has now developed into an industry with important economic significance. IGBT power devices refer to semiconductor components composed of transistors and emitters, used to control current and voltage in electronic circuits, and are more advanced power semiconductor components in the world today
VIEW MORE+
IGBT devices are collectively referred to as igbt, because all electronic components can be called devices.
VIEW MORE+QINGDAO JIAEN SEMICONDUCTOR CO., LTD
Address: Unit 103-104, Building 41, No. 780 Baoyuan Rd, High-tech Zone, Qingdao, China.
Tel:+86 13792436358
Fax:+86-532-67769506
E-mail: vickywang@jiaensemi.com
FOLLOW US
Copyright© Qingdao Jiaen Semiconductor Co., Ltd.（Head Office）,All Rights Reserved. Powered by:Hicheng SITEMAP
