CN

Stock Code:800328

QINGDAO JIAEN SEMICONDUCTOR CO., LTD

  • Typical product introduction
    2022.04.28

    Typical product introduction

    IGBT single tube: a variety of advanced IGBT technology platforms: plane non-punch-through, trench non-punch-through, plane field cut-off, trench field cut-off; providing users with flexible options in terms of economy and performance.

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  • The role of mos in motor controller
    2022.04.23

    The role of mos in motor controller

    The role of the power MOS in the electric vehicle controller is very important. Simply speaking, the output current of the MOS is used to drive the motor. The larger the current output (in order to prevent overcurrent from burning out the MOS, the controller has a current-limiting protection), the stronger the motor torque and the stronger the acceleration (the torque before the motor's magnetic saturation is proportional to the phase current).

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  •  Application of functional ceramics in IGBT - aluminum nitride module
    2022.04.22

    Application of functional ceramics in IGBT - aluminum nitride module

    Functional ceramics in IGBT is equivalent to the application on electronic circuit substrates. As the material of functional ceramic substrates, it has excellent insulation. Next, I will introduce the application of functional ceramics in the field of IGBTs.

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  • The advantages of IGBT induction heating power supply
    2022.04.18

    The advantages of IGBT induction heating power supply

    The series resonance intermediate frequency induction furnace adopts IGBT intermediate frequency power supply. IGBT intermediate frequency power supply is a new type of IGBT inverter module, which is mainly used to smelt carbon steel, alloy steel, cast steel and non-ferrous metals. The IGBT intermediate frequency power supply has the characteristics of fast heating speed, energy saving and environmental protection.

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  • Wind turbine inverter IGBT module drive circuit board structure
    2022.04.15

    Wind turbine inverter IGBT module drive circuit board structure

    IGBT is an insulated gate bipolar transistor. It is a composite fully controlled voltage-driven power semiconductor device composed of a bipolar transistor (BJT) and an insulated gate field effect transistor (MOSFET). It has both the high input impedance of MOSFET and GTR. two advantages of low turn-on voltage drop. In electronic circuits, IGBT is equivalent to a switch in electronic circuits, and is a semiconductor device driven by high power, high current and high withstand voltage.

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  • FRD risk assessment and testing methods
    2022.04.13

    FRD risk assessment and testing methods

    Using the IGBT double-pulse test circuit and changing the position of the voltage and current measurement probes, the related parameters of the freewheeling diode (ie FRD) connected in parallel with the IGBT can be measured and evaluated.

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