The series resonance intermediate frequency induction furnace adopts IGBT intermediate frequency power supply. IGBT intermediate frequency power supply is a new type of IGBT inverter module, which is mainly used to smelt carbon steel, alloy steel, cast steel and non-ferrous metals. The IGBT intermediate frequency power supply has the characteristics of fast heating speed, energy saving and environmental protection.
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IGBT is an insulated gate bipolar transistor. It is a composite fully controlled voltage-driven power semiconductor device composed of a bipolar transistor (BJT) and an insulated gate field effect transistor (MOSFET). It has both the high input impedance of MOSFET and GTR. two advantages of low turn-on voltage drop. In electronic circuits, IGBT is equivalent to a switch in electronic circuits, and is a semiconductor device driven by high power, high current and high withstand voltage.
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Using the IGBT double-pulse test circuit and changing the position of the voltage and current measurement probes, the related parameters of the freewheeling diode (ie FRD) connected in parallel with the IGBT can be measured and evaluated.
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Today, the editor mainly analyzes and expounds the driving application circuit of IGBT. Taking the hybrid integrated circuit EXB841 as an example, it is a typical driving circuit, which can not only drive up to 400A 600V IGBT and up to 300A 1200V IGBT, but also has more complete module functions. , with single power supply, positive and negative bias, overcurrent detection, protection, soft shutdown and other main features.
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In the induction cooker, the IGBT is a component with a large share of damage. If the cause of the failure is not identified, the test machine will cause the IGBT to be damaged again.
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IGBTs (Insulated Gate Bipolar Transistors) are ideal for applications with bus voltages in the hundreds to thousands of volts. As minority carrier devices, IGBTs have better turn-on characteristics than MOSFETs in this voltage range, while having a gate structure very similar to MOSFETs for easy control. In addition, since there is no need for an integrated reverse diode, this gives manufacturers the flexibility to choose a fast "composite package" diode optimized for the application, as opposed to intrinsic MOSFET diodes, which have reverse recovery charge Qrr and reverse recovery The time trr increases as the rated voltage increases.
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