Jiaen Semi has launched new IGBT discretes -650V 75A & 650V 60A in TO-247 package . The two model adopts trench + field stop technology. They are with lower losses and higher energy efficiency for application such as solar inverter, servo drive amplifier and ups applications.
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Why Do Power Semiconductors Explode? The explosion of power semiconductor devices is generally in a short circuit state. The chip bears high voltage and high current at the same time, and the transient power loss is extremely large. When the short circuit state is too long (the driver is not well protected), the heat generated will break the chip (non-uniform internal stress) and the surrounding area in a short time. The material (surface aluminum layer, aluminum wire) vaporizes to produce an explosion.
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Transistor relay devices - IGBT chips are widely used in AC to DC control systems, new energy vehicles and industrial inverters, and are an important part of the modern power electronics industry. my country has made great progress in the field of IGBT chips in recent years. On the basis of the original technology, through comprehensive optimization and innovation, the performance and reliability of IGBT chips have been significantly improved.
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A transistor is a semiconductor device used to amplify signals or act as an electrically controlled switch. A transistor is a three terminal device, a small current/voltage at one terminal (or lead) will control a large current between the other two terminals (leads). Transistors are essential components in almost all electronic circuits such as: amplifiers, switches, oscillators, voltage regulators, power supplies and most importantly digital logic ICs.
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1. What is IGBT? IGBT is a new type of power electronic device. Its basic structure is to add an insulating layer and a control electrode between the base and emitter of the transistor. IGBT combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor), such as high input impedance, low drive power consumption, fast switching capability, etc., and the advantages of BJT (Bipolar Transistor), such as high current carrying capacity, low conduction voltage drop, etc. Therefore, IGBT has broad application prospects in the field of power electronics.
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