Capacitance is a physical quantity that characterizes the ability of a capacitor to hold charge. The amount of electricity required to increase the potential difference between the two plates of a capacitor by 1 volt is called the capacitance of the capacitor. The symbol for capacitance is C. Capacitors are one of the most widely used electronic components in electronic equipment, and are widely used in DC blocking, coupling, bypassing, filtering, tuning circuits, energy conversion, control circuits, etc. Use C to represent the capacitance, and the capacitance units are farad (F), microfarad (uF), picofarad (pF), 1F=10*6uF=10*12pF
VIEW MORE+
As we all know, silicon wafer is the basic material for manufacturing semiconductor devices and chips, and plays a pivotal role in the industry. It can be said that silicon is the most important and widely used semiconductor material today.
VIEW MORE+
The field effect tube of the inverter works in the on-off state, and the current flowing through the tube is very large. If the tube selection is not appropriate, the driving voltage amplitude is not large enough, or the heat dissipation of the circuit is not good, the field effect tube may heat up.
VIEW MORE+
The overcurrent fault of the inverter can be divided into short circuit, light load, heavy load, acceleration, deceleration, and constant speed overcurrent. When analyzing the reasons for the overcurrent fault of the inverter, two aspects should be considered: one is the external cause; the other is the inverter its own reasons.
VIEW MORE+
In power semiconductor devices, MOSFETs play an important role in various power conversions, especially high-frequency power conversions, with high speed, low switching loss, and low driving loss. In the low-voltage field, MOSFET has no competitors, but as the withstand voltage of MOS increases, the on-resistance increases with the power of 2.4-2.6, and its growth rate makes MOSFET manufacturers and users have to reduce it by dozens of times. Rated current to compromise the contradiction between rated current, on-resistance and cost.
VIEW MORE+
According to the equivalent circuit diagram of the IGBT, if a positive driving voltage is applied between the gate G and the emitter E of the IGBT, the MOSFET is turned on, so that the collector C and the base of the PNP transistor are in a low resistance state, which makes the The transistor is turned on; if the voltage between the gate and the emitter of the IGBT is 0V, the MOS is turned off, and the supply of the base current of the PNP transistor is cut off, so that the transistor is turned off. IGBT, like MOSFET, is also a voltage-controlled device. A DC voltage of more than ten V is applied between its gate G and emitter E. Only the leakage current at the uA level flows, and basically no power is consumed.
VIEW MORE+QINGDAO JIAEN SEMICONDUCTOR CO., LTD
Address: Unit 103-104, Building 41, No. 780 Baoyuan Rd, High-tech Zone, Qingdao, China.
Tel:+86 13792436358
Fax:+86-532-67769506
E-mail: vickywang@jiaensemi.com
FOLLOW US
Copyright© Qingdao Jiaen Semiconductor Co., Ltd.（Head Office）,All Rights Reserved. Powered by:Hicheng SITEMAP
