IGBT single tube: a variety of advanced IGBT technology platforms: plane non-punch-through, trench non-punch-through, plane field cut-off, trench field cut-off; providing users with flexible options in terms of economy and performance.
IGBT module: It adopts advanced plane field cut-off technology, has ground saturation voltage drop and high-speed switching characteristics, and is suitable for high-frequency power applications such as welding machines and electromagnetic induction heating.
IPM: DIP-25 IPM intelligent power module, integrated IGBT three-phase inverter circuit and overvoltage, undervoltage, overcurrent, overheating and other protection circuits.
High-voltage VDMOS: mature high-voltage planar VDMOS products. Planar high-voltage MOS, voltage 600~1500 volts, used in inverters, chargers and high-voltage switching power supplies and other fields.
The following are some typical product introductions:
1. JNG20T60FS TO-220F
product description:
Trench NPT process, square RBSOA, soft current turn-off waveform. Lower switching losses lead to improved system energy efficiency and are widely used in various inverter and switching applications. 20A 600V IGBT products are available in TO-220F package, TO-220C package, TO-247 package and TO-263 package.
2. JNG40T60HS TO-247
product description:
Trench NPT process, 1.8V low on-voltage drop, square RBSOA, soft current turn-off waveform. Lower switching losses lead to improved system energy efficiency and are widely used in various inverter and switching applications. 40A 600V IGBT products are available in TO-247 package and TO-3P-3 (internal insulation) package.
3. JNG15T120HS TO-247
product description:
Trench NPT process, 1.9V low on-voltage drop, square RBSOA, soft current turn-off waveform. Lower switching losses lead to improved system energy efficiency and are widely used in various induction heating, inverter and switching applications. 15A 1200V IGBT products are available in TO-247 package, TO-220C package, TO-220F package, TO-3P-3 (internal insulation) package.
4. JNG25N120HS TO-247
product description:
Planar NPT process, excellent short-circuit capability, square RBSOA, soft current turn-off waveform. Lower switching losses lead to improved system energy efficiency and are widely used in various frequency conversion and switching applications.
5. JNG40T120HS TO-247
product description:
Trench NPT process, 2.2V low on-voltage drop, square RBSOA, soft current turn-off waveform. Lower switching losses lead to improved system energy efficiency and are widely used in various induction heating, inverter and switching applications. 40A 1200V IGBT products are available in TO-247 package and TO-247-3 (internal insulation) package.
6. JNG50N120LS TO-264
product description:
Planar NPT, excellent short-circuit capability, square RBSOA, soft current turn-off waveform. Lower switching losses lead to improved system energy efficiency and are widely used in various frequency conversion and switching applications. 50A 1200V IGBT products are available in TO-264 package and TO-247PLUS package.
7. JNG75T120LS TO-264
product description:
Trench NPT, 1.75V low turn-on voltage drop, square RBSOA, soft current turn-off waveform. Lower switching losses lead to improved system energy efficiency and are widely used in various induction heating, inverter and switching applications. 75A 1200V IGBT products are available in TO-264 package and TO-247PLUS package.
8. JNG15N120AI TO-3P-3 (internal insulation)
product description:
Planar NPT, inner insulation package, excellent short circuit capability, square RBSOA, soft current shutdown waveform. Lower switching losses lead to improved system energy efficiency and are widely used in various frequency conversion and switching applications. 15A 1200V IGBT products are available in TO-247 package, TO-220C package, TO-220F package, TO-3P-3 (internal insulation) package.
9. JFQM3N150C TO-3PH
product description:
Planar MOS process, excellent EMI optimization design and EAS capability, low on-resistance, widely used in various switching power supply circuits. 3A 1500V MOSFET products are available in TO-3PH package and TO-220F-3 package.
10. JNG30T60IPD1S1 DIP-25
product description:
IPM process, built-in low-loss 600V 30A IGBT three-phase inverter; enhanced input filter, high-speed 600V level conversion; power supply undervoltage protection, short circuit (overcurrent) protection; compatible with 3.3V & 5V input signal, active high ;Lower side IGBT emitter output; Built-in bootstrap diode.
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