CN

Stock Code:800328

QINGDAO JIAEN SEMICONDUCTOR CO., LTD

  • Braking unit on the frequency converter
    2022.02.25

    Braking unit on the frequency converter

    The braking unit on the inverter refers to the occasions where the mechanical load is relatively heavy and the braking speed is required to be very fast, the regenerative electric energy generated by the motor is consumed by the braking resistor, or the regenerative electric energy is fed back to the power supply. system.

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  • The Principle and Solution of Inverter Produces Strong Electromagnetic Interference
    2022.02.23

    The Principle and Solution of Inverter Produces Strong Electromagnetic Interference

    In the application site, the interference of the inverter occurs more and more seriously, and even the control system cannot be put into use. The working principle of the frequency converter is destined to generate strong electromagnetic interference.

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  • Identification method of MOS tube and IGBT tube in electronic circuit
    2022.02.21

    Identification method of MOS tube and IGBT tube in electronic circuit

    MOS tubes and IGBT tubes are new electronic devices with high frequency of use in modern electronic equipment, so they are often encountered in electronic circuits and are accustomed to. However, due to the similarity in appearance and static parameters of MOS tube and IGBT tube, sometimes it is easy to travel in the selection, judgment, and use. The reliable identification method of MOS tube and IGBT tube is to clear the obstacles for selection, judgment and use.

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  • How to ensure IGBT parallel current sharing by design
    2022.02.18

    How to ensure IGBT parallel current sharing by design

    Due to the inconsistency of the parameters of the parallel IGBTs and the asymmetry of the circuit layout, it will inevitably lead to uneven current distribution of the device, and in severe cases, the device will fail or even damage the main circuit. Therefore, the focus of IGBT parallel connection is to consider how to ensure current sharing through design. At present, some existing IGBT parallel current sharing measures include: derating method, gate resistance matching method, emitter resistance feedback method, and external inductance balancing method.

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  • In the inverter, what are the reasons for the frequent explosion of IGBT modules
    2022.02.16

    In the inverter, what are the reasons for the frequent explosion of IGBT modules

    IGBT is the CPU of power electronic device and plays a pivotal role in power electronic conversion and control. In the inverter, the IGBT module is more important. However, IGBT modules often explode.

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  • IGBT packaging failure mechanism
    2022.02.14

    IGBT packaging failure mechanism

    The reliability of a power device refers to the ability of the device to complete the specified function under specified conditions, usually expressed in terms of service life. Since semiconductor devices are mainly used to realize the switching of current, which will generate large power loss, the thermal management of power electronic systems has become the top priority in the design. In the working process of power electronic devices, the first thing to deal with is thermal problems, which include steady-state temperature, temperature cycling, temperature gradient, and matching of packaging materials at operating temperature.

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