IGBT module is a modular semiconductor product that is packaged by IGBT (insulated gate bipolar transistor chip) and FWD (freewheeling diode chip) through a specific circuit bridge. The packaged IGBT modules are directly used in inverters, UPS uninterruptible power supplies and other equipment, and have the characteristics of energy saving, convenient installation and maintenance, and stable heat dissipation. Currently, most of these modular products are sold on the market. With the advancement of the concept, such products will become more and more common in the market. IGBT is the core device for energy conversion and transmission, commonly known as the "CPU" of power electronic devices. As a national strategic emerging industry, it is widely used in rail transit, smart grid, aerospace, electric vehicles and new energy equipment.
IGBT modules have been widely used in modern power electronics technology because of their excellent electrical properties. The design of the aluminum nitride ceramic substrate is a part of the structural design of the IGBT module. The advantages and disadvantages of the ceramic substrate design will affect the electrical characteristics of the module. Therefore, if you want to complete the design of the IGBT well, you need to follow the aluminum nitride ceramics. Some principles of substrates.
Aluminum nitride ceramic substrate is mainly used as a carrier for various chips (IGBT chip, Diode chip, resistor, SiC chip, etc.) in power electronic module technology. connection, the function is similar to the PCB board.
Aluminum nitride ceramic substrate has the remarkable characteristics of good insulation performance, good heat dissipation performance, low thermal resistance coefficient, matching expansion coefficient, excellent mechanical performance and good welding performance. Using aluminum nitride ceramic substrate as the carrier of the chip can isolate the chip from the module heat dissipation bottom plate. The AlN ceramic layer in the middle of the substrate can effectively improve the insulation capacity of the module (the insulation withstand voltage of the ceramic layer is >2.5KV), and the aluminum nitride layer can effectively improve the insulation capacity of the module. The ceramic substrate has good thermal conductivity, and the thermal conductivity can reach 170-260W/mK.
During the operation of the IGBT module, a large amount of heat will be generated on the surface of the chip. This heat will be transmitted to the module heat dissipation base plate through the ceramic substrate, and then conducted to the heat sink through the thermal grease on the base plate to complete the overall heat dissipation flow of the module. . At the same time, the expansion coefficient of the aluminum nitride ceramic substrate is similar to that of silicon (the main material of the chip is silicon) (7.1ppm/K), which will not cause stress damage to the chip. The peeling resistance of the aluminum nitride ceramic substrate is >20N/mm2, which has excellent Excellent mechanical properties, corrosion resistance, not easy to deform, and can be used in a wide temperature range. And the welding performance is good, and the welding void rate is less than 5%. It is precisely because of the various excellent properties of aluminum nitride ceramic substrates that it is widely used in various types of IGBT modules. IGBT modules using aluminum nitride ceramic substrates have better performance. Thermal fatigue stability and higher integration.
IGBT modules have been widely used in modern power electronics technology, and aluminum nitride ceramic substrates are used as chip carriers in power electronics module technology. The quality of the ceramic substrate design directly affects the electrical performance of the module. Therefore, following certain design principles and reasonably designing the layout of the substrate, an excellent ceramic substrate design can be completed, thereby better completing the structural design of the IGBT module.
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